Publication:
Low temperature selective growth of heavily boron-doped germanium source /drain layers for advanced pMOS devices
Date
| dc.contributor.author | Porret, Clément | |
| dc.contributor.author | Vohra, Anurag | |
| dc.contributor.author | Nakazaki, Nobuya | |
| dc.contributor.author | Hikavyy, Andriy | |
| dc.contributor.author | Douhard, Bastien | |
| dc.contributor.author | Meersschaut, Johan | |
| dc.contributor.author | Bogdanowicz, Janusz | |
| dc.contributor.author | Rosseel, Erik | |
| dc.contributor.author | Pourtois, Geoffrey | |
| dc.contributor.author | Langer, Robert | |
| dc.contributor.author | Loo, Roger | |
| dc.contributor.imecauthor | Porret, Clément | |
| dc.contributor.imecauthor | Vohra, Anurag | |
| dc.contributor.imecauthor | Nakazaki, Nobuya | |
| dc.contributor.imecauthor | Hikavyy, Andriy | |
| dc.contributor.imecauthor | Douhard, Bastien | |
| dc.contributor.imecauthor | Meersschaut, Johan | |
| dc.contributor.imecauthor | Bogdanowicz, Janusz | |
| dc.contributor.imecauthor | Rosseel, Erik | |
| dc.contributor.imecauthor | Pourtois, Geoffrey | |
| dc.contributor.imecauthor | Langer, Robert | |
| dc.contributor.imecauthor | Loo, Roger | |
| dc.contributor.orcidimec | Porret, Clément::0000-0002-4561-348X | |
| dc.contributor.orcidimec | Vohra, Anurag::0000-0002-2831-0719 | |
| dc.contributor.orcidimec | Hikavyy, Andriy::0000-0002-8201-075X | |
| dc.contributor.orcidimec | Meersschaut, Johan::0000-0003-2467-1784 | |
| dc.contributor.orcidimec | Bogdanowicz, Janusz::0000-0002-7503-8922 | |
| dc.contributor.orcidimec | Pourtois, Geoffrey::0000-0003-2597-8534 | |
| dc.contributor.orcidimec | Langer, Robert::0000-0002-1132-3468 | |
| dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
| dc.date.accessioned | 2021-10-29T02:20:08Z | |
| dc.date.available | 2021-10-29T02:20:08Z | |
| dc.date.issued | 2020 | |
| dc.identifier.issn | 1862-6300 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/35757 | |
| dc.identifier.url | https://doi.org/10.1002/pssa.201900628 | |
| dc.source.beginpage | 1900628 | |
| dc.source.issue | 3 | |
| dc.source.journal | Physica Status Solidi A | |
| dc.source.volume | 217 | |
| dc.title | Low temperature selective growth of heavily boron-doped germanium source /drain layers for advanced pMOS devices | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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