Publication:

Formation mechanism of chemically etched porous silicon

Date

 
dc.contributor.authorStalmans, Lieven
dc.contributor.authorVazsonyi, Eva
dc.contributor.authorBender, Hugo
dc.contributor.authorSzilagyi, E.
dc.contributor.authorJalsovsky, G.
dc.contributor.authorHorvath, Z. E.
dc.contributor.authorPetrik, P.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorNijs, Johan
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-09-30T09:35:18Z
dc.date.available2021-09-30T09:35:18Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2157
dc.source.conference17th International Conference on Amorphous and Microcrystalline Semiconductors; August 25-29, 1997; Budapest, Hungary.
dc.source.conferencelocation
dc.title

Formation mechanism of chemically etched porous silicon

dc.typeOral presentation
dspace.entity.typePublication
Files
Publication available in collections: