High Ge content SiGe selective processes for manufacturing source/drain in the next generations of pMOS transistors

dc.contributor.author	Hikavyy, Andriy
dc.contributor.author	Vanherle, Wendy
dc.contributor.author	Witters, Liesbeth
dc.contributor.author	Vincent, Benjamin
dc.contributor.author	Dekoster, Johan
dc.contributor.author	Loo, Roger
dc.contributor.imecauthor	Hikavyy, Andriy
dc.contributor.imecauthor	Vanherle, Wendy
dc.contributor.imecauthor	Witters, Liesbeth
dc.contributor.imecauthor	Vincent, Benjamin
dc.contributor.imecauthor	Dekoster, Johan
dc.contributor.imecauthor	Loo, Roger
dc.contributor.orcidimec	Hikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.date.accessioned	2021-10-20T11:37:52Z
dc.date.available	2021-10-20T11:37:52Z
dc.date.issued	2012
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/20814
dc.identifier.url	http://www.electrochem.org/meetings/biannual/222/download_abstracts/
dc.source.beginpage	3204
dc.source.conference	222nd ECS Fall Meeting
dc.source.conferencedate	7/10/2012
dc.source.conferencelocation	Honolulu, HI USA
dc.title	High Ge content SiGe selective processes for manufacturing source/drain in the next generations of pMOS transistors
dc.type	Meeting abstract
dspace.entity.type	Publication
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