Publication:

Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes

Date

1997
Proceedings Paper
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-5218-4046
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
dc.contributor.authorGramenova, Emilia
dc.contributor.authorJansen, Philippe
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorDupas, Luc
dc.contributor.authorDeferm, Ludo
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDupas, Luc
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-30T08:20:02Z
dc.date.available2021-09-30T08:20:02Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1899
dc.source.beginpage228
dc.source.conferenceCrystalline Defects and Contamination Control: Their Impact and Control in Device Manufacturing II
dc.source.conferencedate31/08/1997
dc.source.conferencelocationParis France
dc.source.endpage239
dc.title

Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes

dc.typeProceedings paper
dspace.entity.typePublication
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