Publication:

Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup

Date

2018
Proceedings Paper
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dc.contributor.authorHellings, Geert
dc.contributor.authorMertens, Hans
dc.contributor.authorKarp, James
dc.contributor.authorMaillard, Pierre
dc.contributor.authorSubirats, Alexandre
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSchram, Tom
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSimicic, Marko
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorParvais, Bertrand
dc.contributor.authorBoudier, D
dc.contributor.authorCretu, B
dc.contributor.authorMachillot, J
dc.contributor.authorPena, V
dc.contributor.authorSun, S
dc.contributor.authorYoshida, N
dc.contributor.authorKim, N
dc.contributor.authorMocuta, Anda
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSimicic, Marko
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecSimicic, Marko::0000-0002-3623-1842
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-25T19:41:03Z
dc.date.available2021-10-25T19:41:03Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30870
dc.identifier.urlhttp://www.alab.ee.nctu.edu.tw/~esd/TESDC/program.html
dc.source.conferenceTaiwan ESD and Reliability Conference
dc.source.conferencedate7/09/2018
dc.source.conferencelocationHsinchu Taiwan
dc.title

Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup

dc.typeProceedings paper
dspace.entity.typePublication
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