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Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs

Date

2010
Proceedings Paper
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dc.contributor.authorKobabyashi, Masaharu
dc.contributor.authorMitard, Jerome
dc.contributor.authorIrisawa, Toshihumi
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorMeuris, Marc
dc.contributor.authorSaraswat, Krishna
dc.contributor.authorNishi, Yoshio
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T17:43:37Z
dc.date.available2021-10-18T17:43:37Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17387
dc.source.beginpage215
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate15/06/2010
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage216
dc.title

Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs

dc.typeProceedings paper
dspace.entity.typePublication
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