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Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K
Publication:
Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K
Date
1998
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nicolett, A. S.
;
Martino, Joao Antonio
;
Simoen, Eddy
;
Claeys, Cor
Journal
Journal de Physique IV
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2062
since deposited on 2021-10-01
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Acq. date: 2025-12-08
Citations
Metrics
Views
2062
since deposited on 2021-10-01
2
last month
1
last week
Acq. date: 2025-12-08
Citations