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Germanium content dependence of the leakage current of recessed SiGe source/drain junctions

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dc.contributor.authorSimoen, Eddy
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorBenedetti, Alessandro
dc.contributor.authorBender, Hugo
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T19:43:30Z
dc.date.available2021-10-16T19:43:30Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12898
dc.source.beginpage787
dc.source.endpage791
dc.source.issue7
dc.source.journalJournal of Materials Science: Materials in Electronics
dc.source.volume18
dc.title

Germanium content dependence of the leakage current of recessed SiGe source/drain junctions

dc.typeJournal article
dspace.entity.typePublication
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