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Pushing the limits of ab-initio-NEGF transport using efficient dissipative Mode-Space algorithms for realistic simulations of low-dimensional semiconductors including their oxide interfaces

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dc.contributor.authorAfzalian, Aryan
dc.contributor.authorDucry, Fabian
dc.contributor.imecauthorAfzalian, Aryan
dc.contributor.imecauthorDucry, Fabian
dc.contributor.orcidimecAfzalian, Aryan::0000-0002-5260-0281
dc.contributor.orcidimecDucry, Fabian::0000-0003-0697-5928
dc.date.accessioned2024-02-05T16:02:20Z
dc.date.available2024-01-11T17:16:26Z
dc.date.available2024-02-05T16:02:20Z
dc.date.issued2023
dc.identifier.eisbn978-4-86348-803-8
dc.identifier.issn1946-1569
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43388
dc.publisherIEEE
dc.source.beginpage305
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
dc.source.conferencedateSEP 27-29, 2023
dc.source.conferencelocationKobe
dc.source.endpage308
dc.source.journalN/A
dc.source.numberofpages4
dc.title

Pushing the limits of ab-initio-NEGF transport using efficient dissipative Mode-Space algorithms for realistic simulations of low-dimensional semiconductors including their oxide interfaces

dc.typeProceedings paper
dspace.entity.typePublication
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