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Tensile strained GeSn on Si by solid phase epitaxy for high mobility FET devices
Publication:
Tensile strained GeSn on Si by solid phase epitaxy for high mobility FET devices
Date
2013
Presentation
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lieten, Ruben
;
Jevasuwan, Wipakorn
;
Uchida, Nori
;
Hattori, H.
;
Seo, Jin Won
;
Locquet, Jean-Pierre
;
Maeda, Tatsuro
Journal
Abstract
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1952
since deposited on 2021-10-21
429
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
1952
since deposited on 2021-10-21
429
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations