Publication:
Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering
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295 since deposited on 2024-04-26
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Acq. date: 2026-04-06
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Statistics
Views
295 since deposited on 2024-04-26
8last month
1last week
Acq. date: 2026-04-06
Citations