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Fabrication and characterization of a highly doped poly-SiGe NEMS ohmic switches

Date

2013
Meeting abstract
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dc.contributor.authorRamezani, Maliheh
dc.contributor.authorSeveri, Simone
dc.contributor.authorDu Bois, Bert
dc.contributor.authorAsafa, Tesleem
dc.contributor.authorRottenberg, Xavier
dc.contributor.authorRochus, Veronique
dc.contributor.authorTilmans, Harrie
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorWitvrouw, Ann
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDu Bois, Bert
dc.contributor.imecauthorRottenberg, Xavier
dc.contributor.imecauthorRochus, Veronique
dc.contributor.imecauthorTilmans, Harrie
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecDu Bois, Bert::0000-0003-0147-1296
dc.contributor.orcidimecTilmans, Harrie::0000-0003-4240-4962
dc.date.accessioned2021-10-21T11:16:38Z
dc.date.available2021-10-21T11:16:38Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22979
dc.source.conferenceNanotechnology Conference and Expo - Nanotech
dc.source.conferencedate12/05/2013
dc.source.conferencelocationWashington, DC USA
dc.title

Fabrication and characterization of a highly doped poly-SiGe NEMS ohmic switches

dc.typeMeeting abstract
dspace.entity.typePublication
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