Study of amorphous Cu-Te-Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices

dc.contributor.author	Devulder, Wouter
dc.contributor.author	Opsomer, Karl
dc.contributor.author	Minjauw, Matthias
dc.contributor.author	Meersschaut, Johan
dc.contributor.author	Jurczak, Gosia
dc.contributor.author	Goux, Ludovic
dc.contributor.author	Detavernier, Christophe
dc.contributor.imecauthor	Devulder, Wouter
dc.contributor.imecauthor	Opsomer, Karl
dc.contributor.imecauthor	Meersschaut, Johan
dc.contributor.imecauthor	Jurczak, Gosia
dc.contributor.imecauthor	Goux, Ludovic
dc.contributor.orcidimec	Devulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimec	Meersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimec	Goux, Ludovic::0000-0002-1276-2278
dc.date.accessioned	2021-10-23T10:35:09Z
dc.date.available	2021-10-23T10:35:09Z
dc.date.issued	2016
dc.identifier.issn	2046-2069
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/26549
dc.identifier.url	http://pubs.rsc.org/en/content/articlelanding/2016/RA/c6ra04064k#!divAbstract
dc.source.beginpage	32106
dc.source.endpage	32114
dc.source.issue	38
dc.source.journal	RSC Advances
dc.source.volume	6
dc.title	Study of amorphous Cu-Te-Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices
dc.type	Journal article
dspace.entity.type	Publication
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