Publication:

The effect of dose rate in X-ray radiation of triple-gate SOI FinFETs parameters

Date

2014
Proceedings Paper
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-5218-4046
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
dc.contributor.authorBordallo, Caio C.M.
dc.contributor.authorTeixeira, Fernando F.
dc.contributor.authorSilveira, Marcilei A.G.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAgopian, Paula
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T00:48:09Z
dc.date.available2021-10-22T00:48:09Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23568
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6940085
dc.source.beginpage1
dc.source.conference29th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate1/09/2014
dc.source.conferencelocationAracaju Brazil
dc.source.endpage4
dc.title

The effect of dose rate in X-ray radiation of triple-gate SOI FinFETs parameters

dc.typeProceedings paper
dspace.entity.typePublication
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