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Impact of the effective work function gate metal on the low-frequency noise of gate-all-around Silicon-on-Insulator NWFETs

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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-8062-3165
cris.virtual.orcid0000-0002-5218-4046
cris.virtualsource.departmentc807a03a-358d-4274-b622-dee889a60454
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orcidc807a03a-358d-4274-b622-dee889a60454
cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
dc.contributor.authorFang, Wen
dc.contributor.authorVeloso, Anabela
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCho, Moon Ju
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorLuo, Jun
dc.contributor.authorZhao, Chao
dc.contributor.authorYe, T.
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T10:47:20Z
dc.date.available2021-10-23T10:47:20Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26609
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7421986
dc.source.beginpage363
dc.source.endpage365
dc.source.issue4
dc.source.journalIEEE Electron Device Letters
dc.source.volume37
dc.title

Impact of the effective work function gate metal on the low-frequency noise of gate-all-around Silicon-on-Insulator NWFETs

dc.typeJournal article
dspace.entity.typePublication
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