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Effect of top dielectric morphology and gate material on the performance of nitride-based FLASH memory cells

Date

2008
Proceedings Paper
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dc.contributor.authorCacciato, Antonio
dc.contributor.authorBreuil, Laurent
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRichard, Olivier
dc.contributor.authorRothschild, Aude
dc.contributor.authorFurnemont, Arnaud
dc.contributor.authorBender, Hugo
dc.contributor.authorKittl, Jorge
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-17T06:25:46Z
dc.date.available2021-10-17T06:25:46Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13470
dc.source.beginpage1071-F02-08
dc.source.conferenceMaterials Science and Technology for Nonvolatile Memories
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Effect of top dielectric morphology and gate material on the performance of nitride-based FLASH memory cells

dc.typeProceedings paper
dspace.entity.typePublication
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