Publication:

NW-TFET analog performance for different gate oxide thickness and Ge source

Date

2014
Proceedings Paper
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dc.contributor.authorNeves Souza, Felipe
dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T04:17:18Z
dc.date.available2021-10-22T04:17:18Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24320
dc.source.beginpage1
dc.source.conference10th Workshop on the Thematic Network on Silicon on Insulator Technology, Devices and Circuits - EUROSOI
dc.source.conferencedate27/01/2014
dc.source.conferencelocationTaragona Spain
dc.source.endpage2
dc.title

NW-TFET analog performance for different gate oxide thickness and Ge source

dc.typeProceedings paper
dspace.entity.typePublication
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