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Influence of GaAs(001) surface termination on the in-plane nagnetic anisotropies of MnSb epitaxial films

Date

1998
Journal article
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dc.contributor.authorAkinaga, Hiroyuki
dc.contributor.authorMiyanishi, S.
dc.contributor.authorVan Roy, Wim
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorVan Roy, Wim
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecVan Roy, Wim::0000-0003-3232-1987
dc.date.accessioned2021-09-30T11:24:48Z
dc.date.available2021-09-30T11:24:48Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2334
dc.source.beginpage3285
dc.source.endpage3287
dc.source.issue22
dc.source.journalApplied Physics Letters
dc.source.volume73
dc.title

Influence of GaAs(001) surface termination on the in-plane nagnetic anisotropies of MnSb epitaxial films

dc.typeJournal article
dspace.entity.typePublication
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