Publication:

A new breakdown failure mechanism in HfO2 gate dielectrics

Date

2004
Proceedings Paper
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dc.contributor.authorRanjan, R.
dc.contributor.authorPey, K.L.
dc.contributor.authorTang, L.J.
dc.contributor.authorTung, C.H.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorRadhakrishnan, M.K.
dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-15T15:45:18Z
dc.date.available2021-10-15T15:45:18Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9494
dc.source.beginpage347
dc.source.conferenceProceedings IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate25/04/2004
dc.source.conferencelocationPhoenix, AZ USA
dc.source.endpage352
dc.title

A new breakdown failure mechanism in HfO2 gate dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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