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Sub nanometer depth resolution profiling of the evolution and annealing of damage and the dopant redistribution of ultra-shallow As and Sb implants in Si

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dc.contributor.authorvan den Berg, J.A.
dc.contributor.authorWerner, M.
dc.contributor.authorArmour, D.G.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClarysse, Trudo
dc.contributor.authorCollart, E.H.J.
dc.contributor.authorGoldberg, R.D.
dc.contributor.authorBailey, P.
dc.contributor.authorNoakes, T.C.
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-15T07:09:03Z
dc.date.available2021-10-15T07:09:03Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8255
dc.source.beginpage446
dc.source.conferenceUltra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic.
dc.source.conferencedate27/04/2003
dc.source.conferencelocationSanta Cruz, CA USA
dc.title

Sub nanometer depth resolution profiling of the evolution and annealing of damage and the dopant redistribution of ultra-shallow As and Sb implants in Si

dc.typeMeeting abstract
dspace.entity.typePublication
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