Publication:
Introduction of WO3 layer in a Cu-based Al2O3 conductive bridge RAM system for robust cycling with larger memory window
Date
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0002-3947-1948 | |
| cris.virtual.orcid | 0000-0002-1276-2278 | |
| cris.virtual.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtualsource.department | 025e00cd-cac2-4956-a05e-c7143b22169c | |
| cris.virtualsource.department | 51733ec3-79c7-4c34-9f77-3a0563c8f5a1 | |
| cris.virtualsource.department | 649f2a57-1fe8-402c-b527-4c3f499c1df1 | |
| cris.virtualsource.department | f132e9b7-1dc9-402e-ba4b-18228712eed1 | |
| cris.virtualsource.orcid | 025e00cd-cac2-4956-a05e-c7143b22169c | |
| cris.virtualsource.orcid | 51733ec3-79c7-4c34-9f77-3a0563c8f5a1 | |
| cris.virtualsource.orcid | 649f2a57-1fe8-402c-b527-4c3f499c1df1 | |
| cris.virtualsource.orcid | f132e9b7-1dc9-402e-ba4b-18228712eed1 | |
| dc.contributor.author | Woo, Jiyong | |
| dc.contributor.author | Belmonte, Attilio | |
| dc.contributor.author | Redolfi, Augusto | |
| dc.contributor.author | Hwang, Hyunsang | |
| dc.contributor.author | Jurczak, Gosia | |
| dc.contributor.author | Goux, Ludovic | |
| dc.contributor.imecauthor | Belmonte, Attilio | |
| dc.contributor.imecauthor | Redolfi, Augusto | |
| dc.contributor.imecauthor | Jurczak, Gosia | |
| dc.contributor.imecauthor | Goux, Ludovic | |
| dc.contributor.orcidimec | Goux, Ludovic::0000-0002-1276-2278 | |
| dc.date.accessioned | 2021-10-23T17:15:20Z | |
| dc.date.available | 2021-10-23T17:15:20Z | |
| dc.date.embargo | 9999-12-31 | |
| dc.date.issued | 2016 | |
| dc.identifier.issn | 2168-6734 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/27596 | |
| dc.identifier.url | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7400894 | |
| dc.source.beginpage | 163 | |
| dc.source.endpage | 166 | |
| dc.source.issue | 3 | |
| dc.source.journal | IEEE Journal of the Electron Devices Society | |
| dc.source.volume | 4 | |
| dc.title | Introduction of WO3 layer in a Cu-based Al2O3 conductive bridge RAM system for robust cycling with larger memory window | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | Original bundle
| |
| Publication available in collections: |