Publication:

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

Date

2022
Proceedings Paper
https://doi.org/10.1109/IRPS48227.2022.9764547
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dc.contributor.authorBastos, Joao
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorFranco, Jacopo
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorTruijen, Brecht
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorCapogreco, Elena
dc.contributor.authorDentoni Litta, Eugenio
dc.contributor.authorSpessot, Alessio
dc.contributor.authorHigashi, Yusuke
dc.contributor.authorYoon, Younggwang
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorFazan, Pierre
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorBastos, Joao
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorTruijen, Brecht
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorDentoni Litta, Eugenio
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorHigashi, Yusuke
dc.contributor.imecauthorYoon, Younggwang
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorFazan, Pierre
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecTruijen, Brecht::0000-0002-2288-1414
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecDentoni Litta, Eugenio::0000-0003-0333-376X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecTyaginov, Stanislav::0000-0002-5348-2096
dc.contributor.orcidimecDegraeve, Robin::0000-0002-4609-5573
dc.contributor.orcidimecCapogreco, Elena::0000-0003-3610-3629
dc.contributor.orcidimecSpessot, Alessio::0000-0003-2381-0121
dc.contributor.orcidimecHigashi, Yusuke::0000-0001-6121-0069
dc.date.accessioned2023-04-26T08:23:45Z
dc.date.available2023-02-27T03:27:53Z
dc.date.available2023-04-26T08:23:45Z
dc.date.embargo9999-12-31
dc.date.issued2022
dc.description.wosFundingTextThis work is supported by imec's industrial affiliation program on Logic and Memory devices. Special thanks to Teruyuki Mine and Yangyin Chen (Western Digital), for the fruitful discussions. The authors would also like to acknowledge the support of imec's fab, line and hardware teams.
dc.identifier.doi10.1109/IRPS48227.2022.9764547
dc.identifier.eisbn978-1-6654-7950-9
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41151
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateMAR 27-31, 2022
dc.source.conferencelocationDallas
dc.source.journalna
dc.source.numberofpages6
dc.subject.keywordsTRAP CREATION
dc.subject.keywordsDEGRADATION
dc.subject.keywordsINTERFACE
dc.subject.keywordsSILICON
dc.subject.keywordsIMPACT
dc.subject.keywordsSIO2
dc.title

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

dc.typeProceedings paper
dspace.entity.typePublication
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