Influence of field-plate configuration on power dissipation and temperature profiles in AlGaN/GaN on silicon HEMTs

dc.contributor.author	Sodan, Vice
dc.contributor.author	Oprins, Herman
dc.contributor.author	Stoffels, Steve
dc.contributor.author	Baelmans, Martine
dc.contributor.author	De Wolf, Ingrid
dc.contributor.imecauthor	Oprins, Herman
dc.contributor.imecauthor	Stoffels, Steve
dc.contributor.imecauthor	De Wolf, Ingrid
dc.contributor.orcidimec	Oprins, Herman::0000-0003-0680-4969
dc.contributor.orcidimec	De Wolf, Ingrid::0000-0003-3822-5953
dc.date.accessioned	2021-10-22T23:02:36Z
dc.date.available	2021-10-22T23:02:36Z
dc.date.issued	2015-08
dc.identifier.issn	0018-9383
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/25928
dc.identifier.url	http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7138606&refinements%3D4226708477%26punumber%3D16%26filter%3DAND%28p_I
dc.source.beginpage	2416
dc.source.endpage	2422
dc.source.issue	8
dc.source.journal	IEEE Transactions on Electron Devices
dc.source.volume	62
dc.title	Influence of field-plate configuration on power dissipation and temperature profiles in AlGaN/GaN on silicon HEMTs
dc.type	Journal article
dspace.entity.type	Publication
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