A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching

cris.virtual.department	#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid	0000-0003-0557-7741
cris.virtualsource.department	419e6158-2400-4361-a474-404554955c35
cris.virtualsource.orcid	419e6158-2400-4361-a474-404554955c35
dc.contributor.author	Goubert, L.
dc.contributor.author	Van Meirhaeghe, R. L.
dc.contributor.author	Clauws, P.
dc.contributor.author	Cardon, F.
dc.contributor.author	Van Daele, Peter
dc.contributor.imecauthor	Van Daele, Peter
dc.contributor.orcidimec	Van Daele, Peter::0000-0003-0557-7741
dc.date.accessioned	2021-09-30T08:19:49Z
dc.date.available	2021-09-30T08:19:49Z
dc.date.embargo	9999-12-31
dc.date.issued	1997
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/1898
dc.source.beginpage	1696
dc.source.endpage	1699
dc.source.issue	4
dc.source.journal	Journal of Applied Physics
dc.source.volume	82
dc.title	A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching
dc.type	Journal article
dspace.entity.type	Publication
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