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High Temperature Influence on the Trade-off between gm/I-D and f(T) of nanosheet NMOS Transistors with Different Metal Gate Stack

 
dc.contributor.authorSilva, Vanessa C. P.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorAgopian, Paula G. D.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2022-06-16T09:02:05Z
dc.date.available2022-05-19T02:21:24Z
dc.date.available2022-06-16T09:02:05Z
dc.date.issued2021
dc.identifier.doi10.1109/EuroSOI-ULIS53016.2021.9560185
dc.identifier.eisbn978-1-6654-3745-5
dc.identifier.issn2330-5738
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39839
dc.publisherIEEE
dc.source.conferenceJoint International EUROSOI Workshop / International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
dc.source.conferencedateSEP 01-03, 2021
dc.source.conferencelocationCaen
dc.source.journalna
dc.source.numberofpages4
dc.title

High Temperature Influence on the Trade-off between gm/I-D and f(T) of nanosheet NMOS Transistors with Different Metal Gate Stack

dc.typeProceedings paper
dspace.entity.typePublication
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