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Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospects of strained SiGe tunneling field-effect transistors

Date

2014
Journal article
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dc.contributor.authorKao, Frank
dc.contributor.authorVerhulst, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorDouhard, Bastien
dc.contributor.authorDelmotte, Joris
dc.contributor.authorBender, Hugo
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSimoen, Eddy
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorArstila, Kai
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorKao, Frank
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T02:28:21Z
dc.date.available2021-10-22T02:28:21Z
dc.date.issued2014
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24031
dc.identifier.urlhttp://dx.doi.org/10.1063/1.4903288
dc.source.beginpage214506
dc.source.issue21
dc.source.journalJournal of Applied Physics
dc.source.volume116
dc.title

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospects of strained SiGe tunneling field-effect transistors

dc.typeJournal article
dspace.entity.typePublication
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