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Poly- silicon etch with diluted ammonia: Application to replacement gate integration scheme

Date

2008
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dc.contributor.authorSebaai, Farid
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.contributor.authorVos, Rita
dc.contributor.authorAbsil, Philippe
dc.contributor.authorChiarella, Thomas
dc.contributor.authorVrancken, Christa
dc.contributor.authorBoelen, Pieter
dc.contributor.authorEvans, Baiya
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorVrancken, Christa
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.date.accessioned2021-10-17T10:39:50Z
dc.date.available2021-10-17T10:39:50Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14456
dc.source.conference9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces - UCPSS
dc.source.conferencedate22/09/2008
dc.source.conferencelocationBrugge Belgium
dc.title

Poly- silicon etch with diluted ammonia: Application to replacement gate integration scheme

dc.typeOral presentation
dspace.entity.typePublication
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