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Low temperature pre-epi treatment: critical parameters to control interface contamination

Date

2008
Proceedings Paper
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dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLeys, Frederik
dc.contributor.authorWada, Masayuki
dc.contributor.authorDe Vos, Brecht
dc.contributor.authorPacco, Antoine
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVerheyen, Peter
dc.contributor.authorVanherle, Wendy
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorDe Vos, Brecht
dc.contributor.imecauthorPacco, Antoine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-17T08:30:20Z
dc.date.available2021-10-17T08:30:20Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14059
dc.source.beginpage21
dc.source.conference4th International Workshop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate25/09/2008
dc.source.conferencelocationSendai Japan
dc.source.endpage22
dc.title

Low temperature pre-epi treatment: critical parameters to control interface contamination

dc.typeProceedings paper
dspace.entity.typePublication
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