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Diode characteristics and thermal donor formation in germanium-doped silicon substrates

Date

2012
Meeting abstract
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dc.contributor.authorRafi, Joan-Marc
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorChen, Jiahe
dc.contributor.authorZabala, M.
dc.contributor.authorYang, Derne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-20T15:02:15Z
dc.date.available2021-10-20T15:02:15Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21367
dc.source.beginpage2652
dc.source.conferenceECS Fall Meeting Symposium E6: High Purity Silicon 12
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
dc.title

Diode characteristics and thermal donor formation in germanium-doped silicon substrates

dc.typeMeeting abstract
dspace.entity.typePublication
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