Publication:

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

Date

2016
Proceedings Paper
Simple item page Full metadata Statistics
 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-6029-1909
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-4532-5784
cris.virtual.orcid0000-0002-7961-4077
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0001-6632-6239
cris.virtualsource.departmente9f2179a-12bb-4886-8a65-41ff6e115551
cris.virtualsource.department8626d3bd-cb85-4100-9ead-fc6793e5c0ae
cris.virtualsource.department6d321b47-4d61-4ee5-beec-14ba85a3af83
cris.virtualsource.departmentb62095ea-6eac-4be1-8575-5b6a5ea9b4a2
cris.virtualsource.department9c7b1f73-bd1f-4c90-94f8-54235fdd37a8
cris.virtualsource.departmenta1ba6cc5-b3a9-4b31-8f64-a47cbd839f9c
cris.virtualsource.orcide9f2179a-12bb-4886-8a65-41ff6e115551
cris.virtualsource.orcid8626d3bd-cb85-4100-9ead-fc6793e5c0ae
cris.virtualsource.orcid6d321b47-4d61-4ee5-beec-14ba85a3af83
cris.virtualsource.orcidb62095ea-6eac-4be1-8575-5b6a5ea9b4a2
cris.virtualsource.orcid9c7b1f73-bd1f-4c90-94f8-54235fdd37a8
cris.virtualsource.orcida1ba6cc5-b3a9-4b31-8f64-a47cbd839f9c
dc.contributor.authorPosthuma, Niels
dc.contributor.authorYou, Shuzhen
dc.contributor.authorLiang, Hu
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorKang, Xuanwu
dc.contributor.authorWellekens, Dirk
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T13:52:24Z
dc.date.available2021-10-23T13:52:24Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27167
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7520786
dc.source.beginpage95
dc.source.conference28th IEEE International Symposium on Power Semiconductor Devices and ICs - ISPSD
dc.source.conferencedate12/06/2016
dc.source.conferencelocationPrague Czech Republic
dc.source.endpage98
dc.title

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
33296.pdf
Size:
999.33 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions