Publication:

Hall hole mobility in boron-doped homoepitaxial diamond

Date

2010
Journal article
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0001-6711-7367
cris.virtualsource.departmentc494e08e-6e92-470e-b96b-d20dbbd419b3
cris.virtualsource.orcidc494e08e-6e92-470e-b96b-d20dbbd419b3
dc.contributor.authorPernot, J.
dc.contributor.authorVolpe, P.N.
dc.contributor.authorOmnès, F.
dc.contributor.authorMuret, P.
dc.contributor.authorMortet, Vincent
dc.contributor.authorHaenen, Ken
dc.contributor.authorTeraji, T.
dc.contributor.imecauthorHaenen, Ken
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.date.accessioned2021-10-18T20:13:59Z
dc.date.available2021-10-18T20:13:59Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17794
dc.source.beginpage205203
dc.source.issue20
dc.source.journalPhysical Review B
dc.source.volume81
dc.title

Hall hole mobility in boron-doped homoepitaxial diamond

dc.typeJournal article
dspace.entity.typePublication
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