On the complementary role of the field and temperature in triggering the on/off switching mechanisms in Hf/HfO2-x resistive RAM cells

Publication:

2013

Journal article

Author(s)

;

;

;

;

;

;

IEEE Transactions on Electron Devices

1834 since deposited on 2021-10-21

1last month

1last week

Acq. date: 2026-08-08