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On the complementary role of the field and temperature in triggering the on/off switching mechanisms in Hf/HfO2-x resistive RAM cells
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On the complementary role of the field and temperature in triggering the on/off switching mechanisms in Hf/HfO2-x resistive RAM cells
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Date
2013
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Govoreanu, Bogdan
;
Clima, Sergiu
;
Radu, Iuliana
;
Chen, Yangyin
;
Wouters, Dirk
;
Altimime, Laith
;
Jurczak, Gosia
Journal
IEEE Transactions on Electron Devices
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1830
since deposited on 2021-10-21
1
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Acq. date: 2025-12-16
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Metrics
Views
1830
since deposited on 2021-10-21
1
last month
Acq. date: 2025-12-16
Citations