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Growth and characterization of buffer structures for high power enhancement-mode AlGaN/GaN HEMT

Date

2017
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dc.contributor.authorMartin, Eickelkamp
dc.contributor.authorFahle, Dirk
dc.contributor.authorMauder, Christof
dc.contributor.authorZhao, Ming
dc.contributor.authorLiang, Hu
dc.contributor.authorPosthuma, Niels
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorHeuken, Michael
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.date.accessioned2021-10-24T08:53:37Z
dc.date.available2021-10-24T08:53:37Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28934
dc.source.conference12th International Conference on Nitride Semiconductors - ICNS
dc.source.conferencedate24/07/2017
dc.source.conferencelocationStrasbourg France
dc.title

Growth and characterization of buffer structures for high power enhancement-mode AlGaN/GaN HEMT

dc.typeMeeting abstract
dspace.entity.typePublication
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