Publication:
A new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
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2042 since deposited on 2021-10-15
2last month
Acq. date: 2026-01-06
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Views
2042 since deposited on 2021-10-15
2last month
Acq. date: 2026-01-06
Citations