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A new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
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2040 since deposited on 2021-10-15
Acq. date: 2025-12-08
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Views
2040 since deposited on 2021-10-15
Acq. date: 2025-12-08
Citations