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EOT-scaling by interface layer scavenging and HfO2 $j-value increase in high-k/metal gate CMOS devices: trade-offs and perspectives
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EOT-scaling by interface layer scavenging and HfO2 $j-value increase in high-k/metal gate CMOS devices: trade-offs and perspectives
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Date
2014
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ragnarsson, Lars-Ake
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Abstract
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1832
since deposited on 2021-10-22
Acq. date: 2026-01-10
Citations
Metrics
Views
1832
since deposited on 2021-10-22
Acq. date: 2026-01-10
Citations