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Modeling the short-channel threshold voltage of a novel vertical heterojunction pMOSFET

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dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-06T10:49:18Z
dc.date.available2021-10-06T10:49:18Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3308
dc.source.beginpage933
dc.source.endpage939
dc.source.issue5
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume46
dc.title

Modeling the short-channel threshold voltage of a novel vertical heterojunction pMOSFET

dc.typeJournal article
dspace.entity.typePublication
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