Publication:

Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique

Date

2021
Journal article
https://doi.org/10.1109/TED.2020.3039756
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dc.contributor.authorPriesol, Juraj
dc.contributor.authorSatka, Alexander
dc.contributor.authorChvala, Ales
dc.contributor.authorStoffels, Steve
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidextSatka, Alexander::0000-0001-5004-4536
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.date.accessioned2022-02-25T13:08:05Z
dc.date.available2022-02-25T13:08:05Z
dc.date.issued2021
dc.identifier.doi10.1109/TED.2020.3039756
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39150
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage216
dc.source.endpage221
dc.source.issue1
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume68
dc.subject.keywordsELECTRON
dc.subject.keywordsDEGRADATION
dc.subject.keywordsPERFORMANCE
dc.subject.keywordsMICROSCOPY
dc.subject.keywordsDEVICES
dc.title

Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique

dc.typeJournal article
dspace.entity.typePublication
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