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Impact of pre- and post-growth treatment on the low-frequency noise of InGaAs nMOSFETs

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dc.contributor.authorScarpino, Mercedes
dc.contributor.authorLin, Dennis
dc.contributor.authorAlian, AliReza
dc.contributor.authorMerckling, Clement
dc.contributor.authorCrupi, Felice
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T05:32:32Z
dc.date.available2021-10-22T05:32:32Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24488
dc.identifier.urlhttp://ecst.ecsdl.org/content/60/1/115.abstract
dc.source.beginpage115
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate16/03/2014
dc.source.conferencelocationPennington, NJ USA
dc.source.endpage120
dc.title

Impact of pre- and post-growth treatment on the low-frequency noise of InGaAs nMOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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