IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Abstract
Nowadays, electro-thermal transport behavior analyzing is important in emerging nanoscale devices because thermal management is a critical issue in improving the device’s performance and cooling strategies. In this article, a comparative study for electro-thermal performance analysis of junctionless and an inversion-mode nanowire gate-all-around (GAA) field-effect transistors (FETs) is presented in advanced technology nodes by considering nonlocal effects. The junctionless device showed ~15.2% better thermal reliability and ~26.7%/37.6% better HCI/BTI lifetime compared to the inversion-mode device. The transient behavior of electro-thermal reliability is also investigated for both devices, where the devices turn on for a short time within a duty cycle, the devices showed better thermal reliability and ~52.8%/68.2% HCI/BTI lifetime improvement. This study also provides strategies for thermal management in advanced node devices.
