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Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
Publication:
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
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Date
2024
Proceedings Paper
https://doi.org/10.1109/IRPS48228.2024.10529393
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Millesimo, M.
;
Fiegna, C.
;
Bakeroot, Benoit
;
Borga, Matteo
;
Posthuma, Niels
;
Decoutere, Stefaan
;
Sangiorgi, E.
;
Tallarico, A. N.
Journal
N/A
Abstract
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502
since deposited on 2024-08-16
Acq. date: 2025-12-12
Citations
Metrics
Views
502
since deposited on 2024-08-16
Acq. date: 2025-12-12
Citations