Publication:

CMOS process-compatible 200mm polycrystalline AlN substrates for GaN power transistors

Date

2017
Proceedings Paper
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dc.contributor.authorGeens, Karen
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorZhao, Ming
dc.contributor.authorŠatka, Alexander
dc.contributor.authorVincze, Andrej
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-24T04:58:48Z
dc.date.available2021-10-24T04:58:48Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28380
dc.identifier.urlhttps://wocsdice2017.iuma.ulpgc.es/wp-content/uploads/2017/05/Wocsdice2017_Final_Programme.pdf
dc.source.beginpage97
dc.source.conferenceWorkshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate21/05/2017
dc.source.conferencelocationLas Palmas de Gran Canaria Spain
dc.source.endpage98
dc.title

CMOS process-compatible 200mm polycrystalline AlN substrates for GaN power transistors

dc.typeProceedings paper
dspace.entity.typePublication
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