Publication:

Breakdown and instability of 3 nm Gate Oxide

Date

1995
Meeting abstract
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dc.contributor.authorDepas, Michel
dc.contributor.authorVermeire, Bert
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-09-29T13:05:42Z
dc.date.available2021-09-29T13:05:42Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/621
dc.source.conference26th IEEE Semiconductor Interface Specialists' Conference
dc.source.conferencedate7/12/1995
dc.source.conferencelocationCharleston, SC USA
dc.title

Breakdown and instability of 3 nm Gate Oxide

dc.typeMeeting abstract
dspace.entity.typePublication
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