Publication:

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

Date

2021-09-29
Journal article
https://doi.org/10.3390/ma14195682
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dc.contributor.authorMols, Yves
dc.contributor.authorVais, Abhitosh
dc.contributor.authorYadav, Sachin
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorVondkar Kodandarama, Komal
dc.contributor.authorAlcotte, Reynald
dc.contributor.authorBaryshnikova, Marina
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorWaldron, Niamh
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLanger, Robert
dc.contributor.authorKunert, Bernardette
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVondkar Kodandarama, Komal
dc.contributor.imecauthorAlcotte, Reynald
dc.contributor.imecauthorBaryshnikova, Marina
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecMols, Yves::0000-0002-7072-0113
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecBaryshnikova, Marina::0000-0002-5945-4459
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.date.accessioned2023-01-17T08:01:40Z
dc.date.available2022-12-23T15:58:16Z
dc.date.available2023-01-17T08:01:40Z
dc.date.embargo2021-09-29
dc.date.issued2021-09-29
dc.identifier.doi10.3390/ma14195682
dc.identifier.issn1996-1944
dc.identifier.pmidMEDLINE:34640072
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40907
dc.publisherMDPI
dc.source.beginpage5682-1
dc.source.endpage5682-16
dc.source.issue19
dc.source.journalMATERIALS
dc.source.numberofpages16
dc.source.volume14
dc.subject.disciplineElectrical & electronic engineering
dc.subject.keywordsHETEROJUNCTION BIPOLAR-TRANSISTOR
dc.subject.keywordsDC
dc.subject.keywordsnano-ridge engineering
dc.subject.keywordsNRE
dc.subject.keywordsMOVPE
dc.subject.keywordsIII-V on Si
dc.subject.keywordshetero epitaxy
dc.title

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

dc.typeJournal article
dspace.entity.typePublication
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