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A deep-level analysis of Ni-Au/AlN(111) p-Si metal-insulator-semiconductor capacitors

Date

2011
Journal article
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-5218-4046
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLeys, Maarten
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-19T18:57:22Z
dc.date.available2021-10-19T18:57:22Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0022-3727
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19797
dc.source.beginpage475104
dc.source.issue47
dc.source.journalJournal of Physics D: Applied Physics
dc.source.volume44
dc.title

A deep-level analysis of Ni-Au/AlN(111) p-Si metal-insulator-semiconductor capacitors

dc.typeJournal article
dspace.entity.typePublication
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