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Table-top HHG EUV scatterometry for roughness and structural parameters evaluation in nano-stacks

 
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cris.virtual.orcid0000-0003-2097-6994
cris.virtual.orcid0000-0001-6985-9663
cris.virtual.orcid0000-0002-2959-432X
cris.virtual.orcid0000-0003-1531-6916
cris.virtual.orcid0000-0002-6294-0896
cris.virtualsource.departmenta3bc452e-a821-4caa-a4e0-07fa4d30b585
cris.virtualsource.department996620bb-af03-47d3-87ed-2e2aaf31be8d
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cris.virtualsource.department4f76861c-b8a8-481c-a987-df30626cabaf
cris.virtualsource.orcida3bc452e-a821-4caa-a4e0-07fa4d30b585
cris.virtualsource.orcid996620bb-af03-47d3-87ed-2e2aaf31be8d
cris.virtualsource.orcid0ed0ad17-0b15-4c84-b55a-e2d02d830fa8
cris.virtualsource.orcid22f8ae87-bdfe-4edf-96d0-5abb583f0a5e
cris.virtualsource.orcid4f76861c-b8a8-481c-a987-df30626cabaf
dc.contributor.authorKrasnov, Vitaly
dc.contributor.authorPasic, Len
dc.contributor.authorHerrero, Analia Fernandez
dc.contributor.authorSoltwisch, Victor
dc.contributor.authorWitting Larsen, Esben
dc.contributor.authorDorney, Kevin
dc.contributor.authorPhilipsen, Vicky
dc.contributor.authorFleischmann, Claudia
dc.date.accessioned2026-08-31T08:27:17Z
dc.date.available2026-08-31T08:27:17Z
dc.date.createdwos2026
dc.date.issued2025
dc.description.abstractExtreme ultraviolet (EUV) or soft X-ray scatterometry is a powerful technique enabling contactless non-destructive structural characterization of patterned nano-stacks with down to sub-nanometer precision1. The technique requires coherent EUV / soft X-ray radiation and is thus typically limited to a synchrotron or free-electron laser facilities. With the continual improvement of table-top high-harmonic-generation (HHG) sources over the last few decades, this approach has become feasible in a lab-scale environment. Here we present EUV scatteromertric results obtained using the coherent 92 eV HHG source in imec’s AttoLab on grating-type samples highly relevant for semiconductor industry. Roughness characterization was performed via direct detection of scattered light utilizing a synthetic aperture and high-dynamic-range detection coupled with noise suppression techniques. Structural parameters (CD, pitch, height, angles, layer and interlayer diffusion thicknesses) were obtained by fitting the sample model to match simulated diffraction patterns to the experimental ones. The latter were acquired through a wide angular scanning (ranging 0 to 65° from grazing). The simulated patterns were calculated by propagating light (using JCMsuite software) through a model of the structured sample. The results demonstrate sub-nanometer precision and are in good agreement with AFM and TEM measurements.
dc.identifier.doi10.1051/epjconf/202533501019
dc.identifier.issn2100-014X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/60144
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherE D P SCIENCES
dc.source.beginpage01019
dc.source.conferenceEOS Annual Meeting (EOSAM). Section: Face2Phase (F2P)
dc.source.conferencedate2025-08-24
dc.source.conferencelocationDelft
dc.source.journalEOS ANNUAL MEETING, EOSAM 2025
dc.source.numberofpages2
dc.title

Table-top HHG EUV scatterometry for roughness and structural parameters evaluation in nano-stacks

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-07-14
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-07-14
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