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Dry-etch Fin patterning on SOI: transition from 32 to 22nm node on a 6T-SRAM cell
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1900 since deposited on 2021-10-17
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Acq. date: 2026-04-06
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1900 since deposited on 2021-10-17
1last month
Acq. date: 2026-04-06
Citations