Publication:

Large current enhancement in n-MOSFETs with strained Si on insulator

Date

2007
Proceedings Paper
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-3513-6058
cris.virtualsource.department2d7dd015-fa43-4fbb-89fc-68f144075506
cris.virtualsource.orcid2d7dd015-fa43-4fbb-89fc-68f144075506
dc.contributor.authorMantl, S.
dc.contributor.authorBuca, D.
dc.contributor.authorZhao, Q.T.
dc.contributor.authorHollaender, B.
dc.contributor.authorFeste, S.
dc.contributor.authorLuysberg, M.
dc.contributor.authorReiche, M.
dc.contributor.authorGösele, U.
dc.contributor.authorBuchholtz, W.
dc.contributor.authorWei, A.
dc.contributor.authorHorstmann, M.
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T17:48:34Z
dc.date.available2021-10-16T17:48:34Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12548
dc.source.conferenceInternational Semiconductor Device Research Symposium - ISDRS
dc.source.conferencedate12/12/2007
dc.source.conferencelocationCollege Park, MD USA
dc.title

Large current enhancement in n-MOSFETs with strained Si on insulator

dc.typeProceedings paper
dspace.entity.typePublication
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