Publication:

A Novel Hybrid High-Speed and Low Power Antiferroelectric HSO Boosted Charge Trap Memory for High-Density Storage

Date

2020
Proceedings Paper
https://doi.org/10.1109/IEDM13553.2020.9371980
Simple item page Full metadata Statistics
 
dc.contributor.authorAli, T.
dc.contributor.authorMertens, K.
dc.contributor.authorOlivo, R.
dc.contributor.authorRudolph, M.
dc.contributor.authorOehler, S.
dc.contributor.authorKuehnel, K.
dc.contributor.authorLehninger, D.
dc.contributor.authorMueller, F.
dc.contributor.authorLederer, M.
dc.contributor.authorHoffmann, R.
dc.contributor.authorSchramm, P.
dc.contributor.authorBiedermann, K.
dc.contributor.authorKia, Alireza M.
dc.contributor.authorMetzger, J.
dc.contributor.authorBinder, R.
dc.contributor.authorCzernohorsky, M.
dc.contributor.authorKaempfe, T.
dc.contributor.authorMueller, J.
dc.contributor.authorSeidel, K.
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorVan Houdt, J.
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan Houdt, Jan::1234-1234-1234-1235
dc.date.accessioned2021-12-16T10:19:08Z
dc.date.available2021-12-06T02:06:50Z
dc.date.available2021-12-16T10:19:08Z
dc.date.issued2020
dc.identifier.doi10.1109/IEDM13553.2020.9371980
dc.identifier.eisbn978-1-7281-8888-1
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38564
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
dc.source.conferencelocationSan Francisco, CA, USA
dc.source.journalna
dc.source.numberofpages4
dc.title

A Novel Hybrid High-Speed and Low Power Antiferroelectric HSO Boosted Charge Trap Memory for High-Density Storage

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions