The influence of capping layer type on cobalt salicide formation in films and narrow lines

cris.virtual.department	#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid	0000-0002-7848-0492
cris.virtualsource.department	6bdcc60f-7ae5-42d4-addd-85ee458d77ce
cris.virtualsource.orcid	6bdcc60f-7ae5-42d4-addd-85ee458d77ce
dc.contributor.author	Besser, Paul
dc.contributor.author	Lauwers, Anne
dc.contributor.author	Roelandts, Nico
dc.contributor.author	Maex, Karen
dc.contributor.author	Blum, W.
dc.contributor.author	Alvis, R.
dc.contributor.author	Stucchi, Michele
dc.contributor.author	de Potter de ten Broeck, Muriel
dc.contributor.imecauthor	Besser, Paul
dc.contributor.imecauthor	Lauwers, Anne
dc.contributor.imecauthor	Maex, Karen
dc.contributor.imecauthor	Stucchi, Michele
dc.contributor.imecauthor	de Potter de ten Broeck, Muriel
dc.date.accessioned	2021-09-30T11:28:05Z
dc.date.available	2021-09-30T11:28:05Z
dc.date.embargo	9999-12-31
dc.date.issued	1998
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/2394
dc.source.beginpage	375
dc.source.conference	Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits
dc.source.conferencedate	13/04/1998
dc.source.conferencelocation	San Francisco, CA USA
dc.source.endpage	380
dc.title	The influence of capping layer type on cobalt salicide formation in films and narrow lines
dc.type	Proceedings paper
dspace.entity.type	Publication
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