Publication:

The influence of capping layer type on cobalt salicide formation in films and narrow lines

Date

1998
Proceedings Paper
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dc.contributor.authorBesser, Paul
dc.contributor.authorLauwers, Anne
dc.contributor.authorRoelandts, Nico
dc.contributor.authorMaex, Karen
dc.contributor.authorBlum, W.
dc.contributor.authorAlvis, R.
dc.contributor.authorStucchi, Michele
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorBesser, Paul
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.date.accessioned2021-09-30T11:28:05Z
dc.date.available2021-09-30T11:28:05Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2394
dc.source.beginpage375
dc.source.conferenceAdvanced Interconnects and Contact Materials and Processes for Future Integrated Circuits
dc.source.conferencedate13/04/1998
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage380
dc.title

The influence of capping layer type on cobalt salicide formation in films and narrow lines

dc.typeProceedings paper
dspace.entity.typePublication
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