Publication:

Quantifying the Impact of Thermal Gradients on Electromigration Lifetimes in 90 nm CD Cu Lines

 
dc.contributor.authorDing, Youqi
dc.contributor.authorVarela Pedreira, Olalla
dc.contributor.authorLofrano, Melina
dc.contributor.authorZahedmanesh, Houman
dc.contributor.authorDiaz Fortuny, Javier
dc.contributor.authorChang, Xinyue
dc.contributor.authorChavez, T.
dc.contributor.authorFarr, H.
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorCroes, Kristof
dc.date.accessioned2026-03-19T10:32:03Z
dc.date.available2026-03-19T10:32:03Z
dc.date.createdwos2025-10-18
dc.date.issued2025
dc.description.abstractThe interaction between thermomigration (TM) and electromigration (EM) in 90 nm CD Cu lines is studied. First, the key physical parameters of TM are assessed: Ea=1.15 eV, D0=5.12×10-9 m2/sec and Q*=0.16 eV. Then, for our dedicated structure, calibrated thermal models combined with analytical models and package level EM, TM and EM+TM tests show a significant impact of thermal gradients (∇T) on EM lifetimes. Using our analytical model, we predict that, for the used technology, at 125 °C, a ∇T of -0.8 °C/μm increases EM lifetimes by 10%, while a ∇T of 1.0 °C/μm decreases it by 10%.
dc.identifier.doi10.1109/IITC66087.2025.11075352
dc.identifier.isbn979-8-3315-3782-1
dc.identifier.issn2380-632X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/58875
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.beginpageN/A
dc.source.conferenceIEEE International Interconnect Technology Conference (IITC)
dc.source.conferencedate2025-06-02
dc.source.conferencelocationBusan
dc.source.journal2025 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC
dc.source.numberofpages3
dc.title

Quantifying the Impact of Thermal Gradients on Electromigration Lifetimes in 90 nm CD Cu Lines

dc.typeProceedings paper
dspace.entity.typePublication
imec.identified.statusLibrary
imec.internal.crawledAt2025-10-22
imec.internal.sourcecrawler
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